output power and efficiency vs. input power c-band internally matched power gaas mesfet NEZ6472-15D NEZ6472-15Dl nez6472-8d nez6472-8dl nez6472-4d nez6472-4dl output power, p out (dbm) power added efficiency, add (%) input power, p in (dbm) features high p out 18w (42.5 dbm) typ p 1db for NEZ6472-15D/15dl 9w (39.5 dbm) typ p 1db for nez6472-8d/8dl 4.5w (36.5 dbm) typ p 1db for nez6472-4d/4dl high efficiency 35% add for 4.5w device 33% add for 9w device 32% add for 18w device low imd -45 dbc im 3 @ 31.5 dbm p out (scl) -15dl -45 dbc im 3 @ 29 dbm p out (scl) -8dl -45 dbc im 3 @ 26 dbm p out (scl) -4dl sio 2 passivated chip for power/gain stability under rf overdrive class a operation internally matched (in/out) superior gain flatness industry compatible hermetic packages notes: 1. p 1db : ouptut power at the 1db gain compression point. 2. scl: single carrier level. part number nez6472-4d nez6472-8d NEZ6472-15D nez6472-4dl nez6472-8dl NEZ6472-15Dl package outline t-61 t-61 t-65 symbols parameters and conditions units min typ max min typ max min typ max test conditions p 1db output power at p idb 1 i dsq = 0.8a, (rf off) dbm 35.5 36.5 v ds = 10v i dsq = 1.6a dbm 38.5 39.5 f = 6.4 i dsq = 4.0a dbm 41.5 42.5 to 7.2 ghz add power added efficiency @ p 1db % 35 33 32 zs = z l i ds drain current at p 1db a 1.1 1.5 2.2 3.0 4.4 6.0 50 ohms g l linear gain db 8.0 9.0 7.5 8.5 7.0 8.0 im 3 3rd order intermodulation distortion 3 at v ds = i0v -xdl pout = 26 dbm scl 2 , i dsq = 0.5 x i dss dbc -45 -42 f 1 = 7.19 ghz option pout = 29 dbm scl 2 , i dsq = 0.5 x i dss dbc -45 -42 f 2 = 7.20 ghz only pout = 31.5 dbm scl 2 , i dsq = 0.5 x i dss dbc -45 -42 2 equal tones i dss saturated drain current, v gs = 0 v a 1.0 2.3 3.5 2.0 4.5 7.0 4.0 9.2 14.0 v p pinch off voltage i ds = 15 ma v -3.5 -2.0 -0.5 v ds = 2.5 v i ds = 30 ma v -3.5 -2.0 -0.5 i ds = 60 ma v -3.5 -2.2 -0.5 bv dgo drain - gate breakdown voltage i dg = 15 ma v 20 22 i dg = 30 ma v 20 22 i dg = 60 ma v 20 22 g m transconductance i ds = i a ms 1300 i ds = 2 a ms 2600 i ds = 4 a ms 5200 r th(ch-c) thermal resistance (channel to case) c/w 5.0 6.0 2.5 3.0 1.3 1.5 ? t (ch-c) channel temperature rise 4 c4848 60 electrical characteristics (t c = 25 c) 3. maximum spec applies to -xdl option only. 4. ? t (ch-c) = t ch - t c = 10 v x i dsq x r th (ch-c) max . california eastern laboratories 45 40 35 25 20 30 12 17 22 27 32 37 100% 80% 60% 40% 20% 0% efficiency p out -15d -8d -4d
nez6472-4d/4dl,-8d/8dl,-15d/15dl input power, p in (dbm) output power, p out (dbm) output power, p out (dbm) output power, p out (dbm) input power, p in (dbm) drain/gate currents, i ds (a) i gs (ma) drain/gate currents, i ds (a) i gs (ma) output power, drain and gate currents vs. input power (-4d/dl) absolute maximum ratings 1 (t c = 25 c) symbols parameters units ratings nez6472-4d/4dl nez6472-8d/8dl NEZ6472-15D/15dl v ds drain to source voltage v 15 15 15 v gs gate to source voltage v -12 -12 -12 v gd gate to drain voltage v -18 -18 -18 i ds drain current a i dss i dss i dss i grf gate current ma 25 50 100 t ch channel temperature c 175 175 175 t stg storage temperature c -65 to +175 -65 to +175 -65 to +175 p t total power dissipation w 25 50 100 drain/gate currents, i ds (a) i gs (ma) total output power, p out (dbm) intermodulation distortion, imd (dbc) intermodulation distortion vs. output power output power, drain and gate currents vs. input power (-15d/dl) typical performance curves (t c = 25 c) input power, p in (dbm) output power, drain and gate currents vs. input power (-8d/dl) part number rg max 1 i grf max v ds max ? ma v nez6472-4d/4dl 200 5 10 nez6472-8d/8dl 100 10 10 NEZ6472-15D/15dl 50 20 10 maximum operating limits note: 1. rg max is the maximum recommended series resistance between the gate supply and the fet gate. notes: 1. operation in excess of any one of these parameters may result in permanent damage. -20 -30 -40 -50 -60 -70 -80 22 26 30 34 38 42 im 3 im 5 -15dl -8dl -4dl 44 41 38 35 32 29 26 23 20 14 17 20 23 26 29 32 35 38 6.0 5.0 4.0 3.0 2.0 1.0 0.0 1.0 2.0 p out i ds i gs 41 36 35 32 29 26 23 4.0 3.0 2.0 1.0 0.0 -1.0 -2.0 16 19 22 25 28 31 34 p out i ds i gs 39 36 33 30 27 24 21 14 17 20 23 26 29 32 2.0 1.0 0.0 1.0 p out i ds i gs
typical performance curves (t c = 25 c) total power dissipation vs. case temperature case temperature, t c ( c) outline dimensions (units in mm) package outline t-61 package outline t-65 power dissipation, p t (w) nez6472-4d/4dl, -8d/8dl, -15d/15dl infinite heat sink -8d/-8dl -4d/-4dl -15d/-15dl 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 175 200 gate drain 0.5 0.1 c 1.5, 4 places source r 1.6, 2 places 2.4 6.45 0.05 3.2 12.9 0.2 2.5 min both leads 17.0 0.2 21.0 0.3 10.7 12.0 +0.1 -0.05 0.1 1.6 2.6 0.2 5.0 max 0.2 max gate side indicator depression 16.0 16.0 0.2 max 5.0 max 1.6 2.4 0.2 +0.1 -0.05 0.1 drain 20.4 0.2 24.0 0.3 2.5 min both leads r 1.2, 4 places 8.0 0.1 c 1.0, 4 places source gate 0.5 0.1 2.4 17.4 0.2 5.6
nez6472-4d/dl, -8d/dl, -15d/dl typical small signal scattering parameters (t c = 25 c) note: 1. gain calculations: mag = maximum available gain msg = maximum stable gain 0.1 0.942 -103.4 13.187 121.3 0.008 62.3 0.625 179.6 0.55 22.4 32.1 0.2 0.958 -141.0 7.998 100.9 0.008 16.7 0.677 177.2 0.28 18.0 29.9 0.5 0.963 -177.8 3.473 71.0 0.009 -0.6 0.691 166.6 0.52 10.8 25.8 1.0 0.968 155.5 1.846 37.5 0.010 -12.2 0.701 151.7 0.73 5.3 22.6 1.5 0.960 133.3 1.294 6.3 0.010 -25.4 0.709 134.5 1.31 2.2 17.7 2.0 0.955 113.5 1.050 -23.5 0.011 -41.3 0.726 118.8 1.49 0.4 15.6 2.5 0.952 92.5 0.982 -52.9 0.012 -63.4 0.737 101.7 1.36 -0.1 15.5 3.0 0.949 71.5 0.914 -82.4 0.013 -85.6 0.748 84.7 1.27 -0.7 15.3 3.5 0.939 47.7 0.981 -115.0 0.016 -117.0 0.752 66.6 0.89 -0.1 17.7 4.0 0.930 23.9 1.047 -147.7 0.020 -148.4 0.756 48.6 0.69 0.3 17.1 4.5 0.872 -3.2 1.262 174.5 0.019 161.2 0.759 28.0 1.69 2.0 13.3 5.0 0.749 -35.9 1.547 134.8 0.024 127.1 0.728 5.8 2.59 3.7 11.1 5.5 0.590 -87.0 2.027 88.7 0.042 71.5 0.645 -21.3 2.28 6.1 10.4 5.8 0.553 -135.4 2.389 55.7 0.056 33.2 0.548 -44.2 1.89 7.5 10.8 6.0 0.528 -167.7 2.631 33.8 0.065 7.7 0.484 -59.5 1.70 8.4 11.1 6.2 0.562 158.3 2.849 9.7 0.072 -20.1 0.395 -78.7 1.51 9.0 11.7 6.4 0.600 126.3 3.002 -16.1 0.080 -46.7 0.305 -102.6 1.31 9.5 12.3 6.5 0.613 112.6 3.061 -28.6 0.083 -59.1 0.265 -117.9 1.24 9.7 12.6 6.6 0.617 98.8 3.134 -41.7 0.087 -71.9 0.234 -135.4 1.17 9.9 13.0 6.7 0.604 86.3 3.189 -54.2 0.092 -83.9 0.218 -154.9 1.13 10.0 13.1 6.8 0.580 73.1 3.195 -67.9 0.095 -97.7 0.204 -178.2 1.14 10.0 12.9 6.9 0.552 60.7 3.245 -81.2 0.101 -110.3 0.211 159.7 1.10 10.2 13.0 7.0 0.506 49.0 3.167 -94.1 0.103 -123.7 0.224 139.5 1.16 10.0 12.3 7.1 0.470 33.6 3.236 -108.6 0.107 -138.5 0.240 117.8 1.14 10.2 12.4 7.2 0.404 19.3 3.152 -121.6 0.106 -150.7 0.244 102.2 1.26 9.9 11.6 7.4 0.271 -17.1 3.068 -147.9 0.110 -175.1 0.248 76.6 1.39 9.7 10.7 nez6472-4d/4dl v ds = 10.0 v, i ds = 800 ma frequency s 11 s 21 s 12 s 22 s 21 k mag 1 ghz mag ang mag ang mag ang mag ang (db) (db) j50 j25 j10 0 -j10 -j25 -j50 -j100 j100 0 s 11 7.4 ghz s 22 0.1 ghz s 11 0.1 ghz 10 25 50 100 s 22 7.4 ghz 120? 90? 60? 30? 150? 180? -150? -120? -90? -60? -30? 0? s 21 0.1 ghz .10 8 10 6 .6 .8 s 21 s 21 7.4 ghz 4 s 12 7.4 ghz s 12 0.1 ghz mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
typical small signal scattering parameters (t c = 25 c) note: 1. gain calculations: mag = maximum available gain msg = maximum stable gain nez6472-4d/dl, -8d/dl, -15d/dl 0.1 0.971 -136.9 8.298 106.7 0.004 20.4 0.801 177.0 0.284 18.3 33.1 0.2 0.975 -161.5 4.465 92.4 0.005 18.2 0.830 175.1 0.454 12.9 29.5 0.5 0.981 174.4 1.859 69.8 0.005 9.8 0.834 165.6 0.757 5.3 25.7 1.0 0.985 153.4 0.991 41.4 0.007 8.5 0.835 151.2 0.870 -0.0 21.5 1.5 0.978 133.4 0.703 13.5 0.008 0.8 0.833 136.2 1.394 -3.0 15.7 2.0 0.973 115.9 0.579 -13.1 0.010 -13.9 0.838 121.7 1.449 -4.7 13.6 2.5 0.962 98.3 0.520 -39.2 0.011 -33.9 0.833 106.5 1.888 -5.6 11.3 3.0 0.972 79.4 0.516 -66.4 0.012 -50.9 0.837 90.6 1.096 -5.7 14.4 3.5 0.984 59.3 0.547 -95.1 0.014 -72.0 0.837 74.6 0.200 -5.2 15.9 4.0 0.973 38.6 0.615 -126.0 0.019 -104.8 0.828 58.0 0.044 -4.2 15.1 4.5 0.955 16.7 0.764 -160.9 0.015 -144.0 0.846 39.9 0.289 -2.3 17.0 5.0 0.862 -8.2 0.965 162.4 0.020 -175.3 0.819 20.8 1.564 -0.3 12.4 5.5 0.720 -42.1 1.344 120.6 0.030 120.1 0.754 -0.4 2.473 2.5 9.7 5.8 0.606 -72.7 1.700 90.8 0.037 80.1 0.692 -17.2 2.720 4.6 9.4 6.0 0.532 -101.1 2.010 68.4 0.047 54.0 0.631 -31.4 2.418 6.0 9.6 6.2 0.477 -137.8 2.353 43.6 0.057 22.0 0.540 -48.7 2.186 7.4 9.9 6.4 0.464 177.9 2.702 15.3 0.070 -10.4 0.421 -71.0 1.842 8.6 10.5 6.5 0.472 156.9 2.837 0.8 0.076 -25.8 0.352 -85.5 1.705 9.0 10.8 6.6 0.486 136.3 2.988 -14.6 0.082 -43.1 0.287 -103.1 1.555 9.5 11.2 6.7 0.491 118.0 3.102 -29.8 0.088 -58.6 0.236 -125.7 1.430 9.8 11.5 6.8 0.488 99.4 3.150 -46.3 0.093 -76.0 0.196 -156.8 1.356 9.9 11.7 6.9 0.475 82.3 3.213 -62.6 0.100 -91.9 0.195 168.9 1.255 10.1 12.0 7.0 0.442 67.0 3.111 -78.6 0.103 -108.9 0.223 139.5 1.272 9.8 11.6 7.1 0.420 49.1 3.135 -95.5 0.105 -126.6 0.262 112.6 1.229 9.9 11.8 7.2 0.364 33.2 3.012 -110.8 0.104 -141.4 0.280 94.7 1.337 9.5 11.1 7.4 0.247 -5.5 2.834 -141.5 0.106 -171.1 0.294 70.1 1.509 9.0 10.0 nez6472-8d/8dl v ds = 10.0 v, i ds = 1600 ma frequency s 11 s 21 s 12 s 22 ks 21 mag 1 (ghz) mag ang mag ang mag ang mag ang (db) (db) mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , j50 j25 j10 0 -j10 -j25 -j50 -j100 j100 0 s 11 7.4 ghz s 11 0.1 ghz 50 s 22 7.4 ghz s 22 0.1 ghz 10 120 ? 90 ? 60 ? 30 ? 150 ? 180 ? -150 ? -120 ? -90 ? -60 ? -30 ? 0 ? s 21 0.1 ghz .25 .15 4 5 3 .1 .2 s 21 s 12 7.4 ghz s 12 0.1 ghz s 21 7.4 ghz exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ? internet: http://www.cel.com 10/16/2000 data subject to change without notice
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